Micron Technology, a supplier of memory and storage solutions, today declared the mass shipment of DRAM products based on 1α (1-alpha) nodes. This process is currently the most advanced DRAM technology in the world, with major breakthroughs in density, power consumption, and performance.
Micron announced that compared with the previous generation of the 1z DRAM process, 1α technology has increased memory density by 40%.
Micron plans to completely introduce the 1α node into its DRAM product line this year, so as to better support a wide range of DRAM applications-providing stronger performance for various applications including mobile devices and smart vehicles.
Micron’s 1α technology node makes memory solutions more energy-efficient and reliable and brings faster LPDDR5 to mobile platforms that require the best low-power DRAM products. Micron provides the lowest power consumption DRAM platform for the mobile industry, achieving 15% energy saving, enabling 5G users to perform more tasks on their mobile phones without sacrificing battery life.
Micron’s 1α advanced memory nodes provide densities from 8Gb to 16Gb, which will help Micron’s existing DDR4 and LPDDR4 series products extend the life cycle, and provide Micron customers in the server, client, network and embedded fields Provide lower power consumption, more reliable products, and more comprehensive product support, thereby reducing the cost of re-verification for customers.
For application scenarios such as automotive embedded solutions, industrial PCs, and edge servers with a long product life cycle, the 1α process also guarantees a more advantageous total cost of ownership during the entire system life cycle.
Micron’s factory in Taiwan, China has started mass production of 1α node DRAM. The first shipments are DDR4 memory for the computing market and Crucial consumer PC DRAM products. Micron has also started to provide mobile customers with LPDDR4 samples for verification. The company will release more new products based on this technology in 2021.
(Source)
