Samsung Electronics announced on March 24 that it has successfully developed a single 512GB DDR5 module, using the High-K Metal Gate process that can give more than DDR4 memory. Times the performance, reaching 7200Mb/s.
Samsung said that the new memory can be used in supercomputers, artificial intelligence operations, data analysis, and other fields to ensure performance release.
HKMG technology is currently only applied to GDDR6 video memory chips, which can use new metal materials as the insulating layer in the chip to reduce leakage current and reduce energy consumption by 13%.
Samsung’s application of this technology in DDR5 memory particles has further established the brand’s leading position. Samsung also uses TSV through silicon via technology to stack 8 layers of 16Gb DRAM chips, so it can achieve a maximum capacity of 512GB of DDR5 memory.
Young-Soo Sohn, vice president of Samsung Electronics’ memory division, said, “Samsung is currently the only semiconductor manufacturer in the world that can use HKMG technology to manufacture memory chips.
This process introduces DRAM manufacturing, and Samsung can give customers high-performance and energy-efficient memory solutions. Programs to help applications such as medical research, finance, autonomous driving, and smart cities.”
Intel also said that with the current continuous growth of data in the world, DDR5 memory is at the key node of cloud computing center, network center, and edge computing. Intel’s team of engineers works closely with Samsung and other companies to make high-speed, energy-saving DDR5 memory.
Intel’s upcoming Xeon processor code-named ‘Sapphire Rapids’ will also be compatible with DDR5 memory. Samsung is experimenting with different variants of its DDR5 memory product prototype and sending samples to customers for inspection.
(Source)
