According to the latest report, Samsung has set a goal to complete the development of the sixth-generation 1c DRAM chip at 11 nanometers by June this year. The company is said to have asked its researchers to stop or skip the development of 1b DRAM, a 12-nanometer chip.
Previously, it was reported that Samsung had interrupted the research and development of 12-13nm process level memory, indicating that Samsung’s 13nm level memory was indirectly admitted to failure.
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Samsung hopes to widen the technological gap with rivals including SK Hynix and Micron Technology, the report said. Also, this isn’t the first time Samsung has abandoned certain stages of DRAM development and moved to a higher level. Previously, Samsung abandoned mass production of 28nm DRAM to focus on producing 25nm DRAM.
Moreover, industry experts believe that it will not be easy for Samsung to produce 11nm DRAM, as it requires advanced technology. However, according to BusinessKorea, Samsung is looking to find a way, and the company is facing huge development pressure before the completion of 1c DRAM as it lags behind its two rivals in mass production of 1a DRAM.
Furthermore, memory technology has different generation methods after the 20nm node. Previously, 1x, 1y and 1z were used, and later 1a, 1b, and 1c processes were used. However, Samsung, SK Hynix, and Micron have three major memory technologies. The actual process of the giant is not entirely like this, and sometimes the number + nm name is announced.
