According to the latest report, Samsung Electronics‘ 3nm GAA process yield is still far behind its target. According to a report, Samsung is working to improve its 3nm GAA process yield, which has just hit between 10% and 20%. The yield rate of Samsung’s 4nm process manufacturing is also unsatisfactory, only 30%-35%.
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Moreover, Samsung plans to introduce the second-generation 3-nanometer process (3GAP) in 2023, when it may begin to actively serve foundry customers. Market sources believe that Samsung’s first-generation 3nm GAA process will first be used in the manufacture of Samsung’s self-developed chips, and the process is unlikely to be adopted by external customers.
But the source said Samsung’s second-generation 3nm process will be ready for chip designs by external customers, with mass production expected to begin next year. It remains to be seen whether TSMC will face yield issues as it moves to GAA transistor technology, the source noted. It is possible for TSMC to have GAA-based 2nm, which is targeted for production in 2025.
It is said that Samsung Electronics plans to achieve mass production of 3nm process chips this year, but it is rumored in the industry that the trial production yield of the current process (3GAE) is not satisfactory, only reaching about 20%. The high cost brought by the low yield rate makes Samsung may only be used for its own product production in the initial mass production of the 3nm process.
