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SK Hynix is developing UFS4.0 flash memory based on 238-layer NAND: Report
According to the latest report, semiconductor industry sources revealed that SK Hynix plans to mass-produce the latest UFS 4.0 flash memory using 238-layer NAND (V8) as early as the first half of next year.
According to the UFS 4.0 memory development plan formulated by SK Hynix, it will mainly carry V7 and V8 NAND on UFS 4.0 flash memory, of which V8 is the world’s first 238-layer NAND flash memory developed by SK Hynix, and 176-layer NAND (V7) compared with the energy consumption reduced by 21%.
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It adopts 4D packaging technology. Compared with 3D packaging, the former reduces the unit cell area and has higher production efficiency.
The source also revealed the data processing speed of the UFS 4.0 flash memory being developed by SK Hynix: 4000 MB/s for continuous reading and 2800 MB/s for continuous writing. The external specification is 11×13×0.8mm. From the point of view of speed alone, the speed of exposure may only be equipped with V7 NAND.
For comparison, Samsung’s UFS 4.0 flash memory, which was launched on May 4, uses 176-layer NAND (V7), with a continuous read of 4200 MB/s and a continuous write of 2800 MB/s, with a form factor of 11×13×1mm.
Previously, it was reported that the data transfer speed of SK Hynix’s 238-layer NAND flash memory was 2.4Gbps, which was 50% higher than that of the previous generation. It has not yet been applied to UFS 4.0.